ReS2 ReSe2 anisotropic electrical transport scanning transmission electron microscopy transition metal dichalcogenides. This tunable in-plane transport behavior opens up great avenues for creating nanoelectronic circuits in 2D materials. Figure 5: Powder diffraction simulation of BCC Fe in CrystalMaker. Furthermore, high chalcogen deficiency can induce a structural transformation to a nonstoichiometric phase, which is again strongly direction-dependent. We further show that the direction of conducting channels in ReS2 and ReSe2 can be controlled by electron beam irradiation at elevated temperatures and follows the strain induced to the sample. Using a combination of transmission electron microscopy and transport measurements, we demonstrate here the direct correlation of electron transport anisotropy in single-layered ReS2 with the atomic orientation of the DS-chains, as also supported by our density functional theory calculations. ![]() ![]() Rhenium disulfide (ReS2) and diselenide (ReSe2), the group 7 transition metal dichalcogenides (TMDs), are known to have a layered atomic structure showing an in-plane motif of diamond-shaped-chains (DS-chains) arranged in parallel. After TFSI treatment, the drain current of O-ReS 2 FET was significantly increased up to 1,113.4 times except in the range of 0.320.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS 2 FET.
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